High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs
نویسندگان
چکیده
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through advanced CMOS logic platform. Under lower voltage (VGS-VT) and higher drain/source VDS, channel-length modulation (CLM) effect coming from interaction impact of vertical field horizontal drain was increased had to be revised well as channel length L decreased. Compared 28-nm MOSFETs, previous at tested FinFETs SOI substrate short-channel is than that device, which means severity both fields for nFinFETs mitigated, but still necessary concerned.
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ژورنال
عنوان ژورنال: Crystals
سال: 2021
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst11030262